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Laser writing of the electronic activity of N- and H-atoms in GaAs (2011)
Journal Article
Martelli, F., Rubini, S., Balakrishnan, N., Patanè, A., Makarovsky, O., Polimeni, A., & Capizzi, M. (2011). Laser writing of the electronic activity of N- and H-atoms in GaAs. Applied Physics Letters, 021105 - 021105. https://doi.org/10.1063/1.3610464

We use a focussed laser beam to control the electronic activity of N- and H-atoms in a dilute nitride Ga(AsN)/GaAs quantum well. Our approach yields submicron resolution in the spatial manipulation of the electronic properties and can provide an alte... Read More about Laser writing of the electronic activity of N- and H-atoms in GaAs.