The effect of energetic ion bombardment during growth on the interface structure of Co/Cu multilayers

Telling, N.D; Karlsson, C; Crapper, M.D; Tang, C.C

Abstract

A modified unbalanced magnetron sputtering technique was applied to the growth of multilayer Co/Cu films in order to systematically study the interface structure evolved under ion bombardment. X-ray reflectivity measurements revealed an interface smoothing effect in samples deposited under ∼200 eV ion bombardment. A reduction in the Bragg peak intensity for samples with a greater number of bilayer repeats was also observed. This was attributed to roughening of the final surface in the thicker films.

Citation

Telling, N., Karlsson, C., Crapper, M., & Tang, C. (1999). The effect of energetic ion bombardment during growth on the interface structure of Co/Cu multilayers. Journal of Magnetism and Magnetic Materials, 198-199, 713-715. https://doi.org/10.1016/s0304-8853%2898%2901015-4

• Journal Article Type: Article
• Online Publication Date: Jan 7, 2000
• Publication Date: 1999-06
• Deposit Date: May 16, 2024
• Journal: Journal of Magnetism and Magnetic Materials
• Print ISSN: 0304-8853
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 198-199
• Pages: 713-715
• DOI: https://doi.org/10.1016/s0304-8853%2898%2901015-4
• Keywords: Ion-assisted deposition; Multilayers; Interfaces
• Public URL: https://keele-repository.worktribe.com/output/828757
• Publisher URL: https://www.sciencedirect.com/science/article/pii/S0304885398010154