Outputs (2)

Epitaxial growth of ?-InSe and a, ß, and ?-In2Se3 on e-GaSe (2018)
Journal Article
Balakrishnan, N., Steer, E., Patanè, A., Beton, P., Kovalyuk, Z., Eaves, L., …Kudrynskyi, Z. (2018). Epitaxial growth of ?-InSe and a, ß, and ?-In2Se3 on e-GaSe. 2D Materials, 035026 - 035026. https://doi.org/10.1088/2053-1583/aac479

We demonstrate that ?-InSe and the a, ß and ? phases of In2Se3 can be grown epitaxially on e-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different p... Read More about Epitaxial growth of ?-InSe and a, ß, and ?-In2Se3 on e-GaSe.

Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe (2018)
Journal Article
Balakrishnan, N., Steer, E. D., Smith, E. F., Kudrynskyi, Z. R., Kovalyuk, Z. D., Eaves, L., …Beton, P. H. (2018). Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials, 5, Article 035026. https://doi.org/10.1088/2053-1583/aac479

We demonstrate that ?-InSe and the a, ß and ? phases of In2Se3 can be grown epitaxially on e-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different p... Read More about Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe.