Epitaxial growth of ?-InSe and a, ß, and ?-In2Se3 on e-GaSe

Balakrishnan, N; Steer, ED; Patanè, A; Beton, PH; Kovalyuk, ZD; Eaves, L; Smith, EF; Kudrynskyi, ZR

Abstract

We demonstrate that ?-InSe and the a, ß and ? phases of In2Se3 can be grown epitaxially on e-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the substrate within the furnace. The uniform cleaved surface of e-GaSe enables the epitaxial growth of the InxSey layers, which are aligned over large areas. The InxSey epilayers are characterised using Raman, photoluminescence, x-ray photoelectron and electron dispersive x-ray spectroscopies. Each InxSey phase and stoichiometry exhibits distinct optical and vibrational properties, providing a tuneable photoluminescence emission range from 1.3?eV to ~2?eV suitable for exploitation in electronics and optoelectronics.

Citation

Balakrishnan, N., Steer, E., Patanè, A., Beton, P., Kovalyuk, Z., Eaves, L., Smith, E., & Kudrynskyi, Z. (2018). Epitaxial growth of ?-InSe and a, ß, and ?-In2Se3 on e-GaSe. 2D Materials, 035026 - 035026. https://doi.org/10.1088/2053-1583/aac479

• Acceptance Date: May 14, 2018
• Publication Date: Jun 1, 2018
• Journal: 2D Materials
• Electronic ISSN: 2053-1583
• Publisher: IOP Publishing
• Pages: 035026 - 035026
• DOI: https://doi.org/10.1088/2053-1583/aac479
• Keywords: indium selenide, III–VI van der Waals layered crystals, 2D materials, physical vapour transport
• Public URL: https://keele-repository.worktribe.com/output/415027
• Publisher URL: https://doi.org/10.1088/2053-1583/aac479