Role of vacancies in the magnetic and electronic properties of SiC nanoribbons: A nab initio study

Morbec, Juliana M; Rahman, Gul

Abstract

Using ab initio calculations based on density functional theory, we investigate the effects of vacancies on the electronic and magnetic properties of zigzag SiC nanoribbons (Z-SiCNR). Single (V C and V Si ) and double (V Si V Si and V Si V C) vacancies are observed to induce magnetism in Z-SiCNRs. The presence of a single V Si does not affect the half-metallic behavior of pristine Z-SiCNRs; however, a single V C leads to a transition from half-metallic to metallic behavior in Z-SiCNRs due to the edge Si p orbitals and the atoms surrounding the vacancy. The interactions of vacancies with foreign impurity atoms (B and N) are also investigated, and it is observed that V i N C not only suppresses the oscillatory type magnetism of V Si V C but also retains the half-metallic character of the pristine Z-SiCNRs. The defect formation energies of vacancies can be reduced by substitutional B and N atoms. We believe that ferromagnetism is expected if Z-SiCNRs are grown under suitable conditions.

Citation

Morbec, J. M., & Rahman, G. (2013). Role of vacancies in the magnetic and electronic properties of SiC nanoribbons: A nab initio study. Physical review B: Condensed matter and materials physics, https://doi.org/10.1103/physrevb.87.115428

• Acceptance Date: Mar 20, 2013
• Publication Date: Mar 20, 2013
• Journal: Physical Review B
• Print ISSN: 1098-0121
• Publisher: American Physical Society
• DOI: https://doi.org/10.1103/physrevb.87.115428
• Publisher URL: http://doi.org/10.1103/physrevb.87.115428