Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes
Patanè, A; Hopkinson, M; Makarovsky, O; Balakrishnan, N; Pettinari, G
Nilanthy Balakrishnan email@example.com
We report on the tuning of the spectral response of superlattice (SL) diodes based on dilute nitride Ga(AsN) alloys by post-growth hydrogenation. Hydrogen is incorporated into the superlattice where it neutralizes the electronic activity of nitrogen by forming N-H complexes. We exploit the controlled thermal dissociation of the complexes to tune the energy of the SL photocurrent absorption and electroluminescence emission; also, by annealing a submicron spot with a focused laser beam we create a preferential path for the injection of carriers, thus activating a nanoscale light emitting region. This method can be used for fabricating planar diode arrays with distinct optical active regions, all integrated onto a single substrate.
This work was supported by the University of Nottingham, the EU (under Grant Agreement No. PIEF-GA-2010-272612), the Italian MIUR (under FIRB 2012 project DeLIGHTeD, prot. RBFR12RS1W), and the EPSRC. We acknowledge useful discussions with Professor Mario Capizzi and Professor Antonio Polimeni (Sapienza Università di Roma).
|Acceptance Date||Jun 1, 2014|
|Publication Date||Jun 16, 2014|
|Journal||Applied Physics Letters|
|Pages||242110 - 242110|
Tunable spectral responce.pdf
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