Band-gap profiling by laser writing of hydrogen-containing III-N-Vs

Martelli, F; Patanè, A; Rubini, S; Balakrishnan, N; Pettinari, G; Makarovsky, O; Turyanska, L; Fay, MW; De Luca, M; Polimeni, A; Capizzi, M

Abstract

We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200?°C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable.

Citation

Martelli, F., Patanè, A., Rubini, S., Balakrishnan, N., Pettinari, G., Makarovsky, O., …Capizzi, M. (2012). Band-gap profiling by laser writing of hydrogen-containing III-N-Vs. Physical review B: Condensed matter and materials physics, https://doi.org/10.1103/PhysRevB.86.155307

• Acceptance Date: Oct 10, 2012
• Publication Date: Oct 10, 2012
• Journal: Physical Review B
• Print ISSN: 1098-0121
• Publisher: American Physical Society
• DOI: https://doi.org/10.1103/PhysRevB.86.155307
• Publisher URL: https://doi.org/10.1103/PhysRevB.86.155307