F Martelli
Band-gap profiling by laser writing of hydrogen-containing III-N-Vs
Martelli, F; Patanè, A; Rubini, S; Balakrishnan, N; Pettinari, G; Makarovsky, O; Turyanska, L; Fay, MW; De Luca, M; Polimeni, A; Capizzi, M
Authors
A Patanè
S Rubini
Dr Nilanthy Balakrishnan n.balakrishnan@keele.ac.uk
G Pettinari
O Makarovsky
L Turyanska
MW Fay
M De Luca
A Polimeni
M Capizzi
Abstract
We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200?°C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable.
Acceptance Date | Oct 10, 2012 |
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Publication Date | Oct 10, 2012 |
Journal | Physical Review B |
Print ISSN | 1098-0121 |
Publisher | American Physical Society |
DOI | https://doi.org/10.1103/PhysRevB.86.155307 |
Publisher URL | https://doi.org/10.1103/PhysRevB.86.155307 |
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Band-gap profiling by laser writing of hydrogen-containing III-N-Vs.pdf
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