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Multilayer growth by low energy ion beam deposition

Joyce, D.E; Telling, N.D; Van den Berg, J.A; Lord, D.G; Grundy, P.J

Authors

D.E Joyce

J.A Van den Berg

D.G Lord

P.J Grundy



Abstract

We report our progress in the development of a relatively new deposition technique, that of direct low energy ion beam deposition. We describe this technique, which is based on ion implanter technology similar to that used in the semiconductor industry, where slow deposition rates, of order 0.005 nm/s, potentially allow for better control of the film properties as a function of depth. We present preliminary data from films grown on this system with deposition energies ranging from several tens of eV to several hundred eV with particular reference to the effect of deposition energy on morphology of Co based films and multilayers. We also explore possibilities for this technique which include ultra thin film growth and isotopic deposition.

Citation

Joyce, D., Telling, N., Van den Berg, J., Lord, D., & Grundy, P. (1999). Multilayer growth by low energy ion beam deposition. Journal of Magnetism and Magnetic Materials, 198-199, 731-733. https://doi.org/10.1016/s0304-8853%2898%2901021-x

Journal Article Type Article
Online Publication Date Jan 7, 2000
Publication Date Jun 1, 1999
Deposit Date May 16, 2024
Journal Journal of Magnetism and Magnetic Materials
Print ISSN 0304-8853
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 198-199
Pages 731-733
DOI https://doi.org/10.1016/s0304-8853%2898%2901021-x
Public URL https://keele-repository.worktribe.com/output/828763
Publisher URL https://www.sciencedirect.com/science/article/pii/S030488539801021X