M Al-Shakban
Chemical Vapor Deposition of Tin Sulfide from Diorganotin(IV) Dixanthates
Al-Shakban, M; Matthews, p; Lewis, EA; O'Brien, P; Haigh, SJ; Lewis, DJ; Raftery, J; Vitorica-Yrezabal, I
Authors
Peter Matthews p.d.matthews@keele.ac.uk
EA Lewis
P O'Brien
SJ Haigh
DJ Lewis
J Raftery
I Vitorica-Yrezabal
Abstract
We report the synthesis and single-crystal X-ray characterization of diphenyltin bis(2-methoxyethylxanthate) and diphenyltin bis(iso-butylxanthate). These xanthates have been used as a single-source precursor to deposit tin chalcogenide thin films by aerosol-assisted chemical vapor deposition. Grazing incidence X-ray diffraction and scanning transmission electron microscope imaging coupled with elemental mapping show that films deposited from diphenyltin bis(iso-butylxanthate) contain orthorhombic SnS, while films deposited from diphenyltin bis(2-methoxyethylxanthate) between 400 and 575 °C form a SnS/SnO2 nanocomposite. In synthesizing the thin films, we have also demonstrated an ability to control the band gap of the materials based on composition and deposition temperature.
Citation
Al-Shakban, M., Matthews, P., Lewis, E., O'Brien, P., Haigh, S., Lewis, D., …Vitorica-Yrezabal, I. (2018). Chemical Vapor Deposition of Tin Sulfide from Diorganotin(IV) Dixanthates. Journal of Materials Science, https://doi.org/10.1007/s10853-018-2968-y
Acceptance Date | Sep 24, 2018 |
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Publication Date | Sep 28, 2018 |
Journal | Journal of Materials Science |
Print ISSN | 0022-2461 |
Publisher | Springer Verlag |
DOI | https://doi.org/10.1007/s10853-018-2968-y |
Publisher URL | http://doi.org/10.1007/s10853-018-2968-y |
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