Chemical Vapor Deposition of Tin Sulfide from Diorganotin(IV) Dixanthates

Al-Shakban, M; Matthews, p; Lewis, EA; O'Brien, P; Haigh, SJ; Lewis, DJ; Raftery, J; Vitorica-Yrezabal, I

Abstract

We report the synthesis and single-crystal X-ray characterization of diphenyltin bis(2-methoxyethylxanthate) and diphenyltin bis(iso-butylxanthate). These xanthates have been used as a single-source precursor to deposit tin chalcogenide thin films by aerosol-assisted chemical vapor deposition. Grazing incidence X-ray diffraction and scanning transmission electron microscope imaging coupled with elemental mapping show that films deposited from diphenyltin bis(iso-butylxanthate) contain orthorhombic SnS, while films deposited from diphenyltin bis(2-methoxyethylxanthate) between 400 and 575 °C form a SnS/SnO2 nanocomposite. In synthesizing the thin films, we have also demonstrated an ability to control the band gap of the materials based on composition and deposition temperature.

Citation

Al-Shakban, M., Matthews, P., Lewis, E., O'Brien, P., Haigh, S., Lewis, D., …Vitorica-Yrezabal, I. (2018). Chemical Vapor Deposition of Tin Sulfide from Diorganotin(IV) Dixanthates. Journal of Materials Science, https://doi.org/10.1007/s10853-018-2968-y

• Acceptance Date: Sep 24, 2018
• Publication Date: Sep 28, 2018
• Journal: Journal of Materials Science
• Print ISSN: 0022-2461
• Publisher: Springer Verlag
• DOI: https://doi.org/10.1007/s10853-018-2968-y
• Publisher URL: http://doi.org/10.1007/s10853-018-2968-y