Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

Patanè, A; Cerutti, L; Di Paola, DM; Velichko, AV; Bomers, M; Balakrishnan, N; Makarovsky, O; Kesaria, M; Baranov, N; Capizzi, M; Krier, A; Taliercio, T

Abstract

Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photoannealing of the semiconductor is attributed to the dissociation of the N?H bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing.

Citation

Patanè, A., Cerutti, L., Di Paola, D., Velichko, A., Bomers, M., Balakrishnan, N., Makarovsky, O., Kesaria, M., Baranov, N., Capizzi, M., Krier, A., & Taliercio, T. (2018). Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor. Advanced optical materials, 6(3), Article 1700492. https://doi.org/10.1002/adom.201700492

• Journal Article Type: Article
• Acceptance Date: Dec 28, 2017
• Online Publication Date: Dec 28, 2017
• Publication Date: Feb 5, 2018
• Publicly Available Date: May 26, 2023
• Journal: Advanced Optical Materials
• Electronic ISSN: 2195-1071
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 6
• Issue: 3
• Article Number: 1700492
• DOI: https://doi.org/10.1002/adom.201700492
• Keywords: hydrogenation, mid-infrared, plasmonics, polaritons, semiconductors
• Public URL: https://keele-repository.worktribe.com/output/415037
• Publisher URL: https://doi.org/10.1002/adom.201700492