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Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor

Patanè, A; Cerutti, L; Di Paola, DM; Velichko, AV; Bomers, M; Balakrishnan, N; Makarovsky, O; Kesaria, M; Baranov, N; Capizzi, M; Krier, A; Taliercio, T

Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor Thumbnail


Authors

A Patanè

L Cerutti

DM Di Paola

AV Velichko

M Bomers

O Makarovsky

M Kesaria

N Baranov

M Capizzi

A Krier

T Taliercio



Abstract

Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photoannealing of the semiconductor is attributed to the dissociation of the N?H bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing.

Citation

Patanè, A., Cerutti, L., Di Paola, D., Velichko, A., Bomers, M., Balakrishnan, N., …Taliercio, T. (2018). Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor. Advanced optical materials, 1700492 - 1700492. https://doi.org/10.1002/adom.201700492

Acceptance Date Dec 28, 2017
Publication Date Feb 5, 2018
Journal Advanced Optical Materials
Publisher Wiley
Pages 1700492 - 1700492
DOI https://doi.org/10.1002/adom.201700492
Keywords hydrogenation, mid-infrared, plasmonics, polaritons, semiconductors
Publisher URL https://doi.org/10.1002/adom.201700492

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