Laser Writing of the Electronic Activity of Nitrogen and Hydrogen Atoms in Gallium Arsenide

Abstract

In this study, we use a focussed laser beam to control the electronic activity of N- and H-atoms in a dilute nitride Ga(AsN)/GaAs quantum well (QW). We find that the laser can be used to dissociate N-H complexes in hydrogenated Ga(AsN) thus enabling us to control the photoluminescence emission energy of the QW with submicron spatial resolution. The mechanism responsible for the dissociation results from the combination of thermal heating and photoexcitation phenomena. The H-distribution profile across the laser annealed region is probed by secondary electron imaging in a field-emission scanning electron microscope. The spatial distribution of H inside the annealed region is characterized by an inverted Gaussian with a minimum corresponding to a lower H-content. Our laser writing approach yields sub-micron resolution in the spatial manipulation of the electronic properties and can provide an alternative method to masking techniques for H-defect engineering and in-plane patterning of the band gap energy of interest for new nanotechnologies.

Citation

(2011). Laser Writing of the Electronic Activity of Nitrogen and Hydrogen Atoms in Gallium Arsenide