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Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures

Xie, Shihong; Dey, Anubhab; Yan, Wenjing; Kudrynskyi, Z; Balakrishnan, Nilanthy; Kovalyuk, ZD; Makarovsky, Oleg; Castanon, E; Kolosov, Oleg; Wang, Kaiyou; Patane, A

Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures Thumbnail


Authors

Shihong Xie

Anubhab Dey

Wenjing Yan

Z Kudrynskyi

ZD Kovalyuk

Oleg Makarovsky

E Castanon

Oleg Kolosov

Kaiyou Wang

A Patane



Abstract

The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor a-In2Se3 is embedded between two single-layer graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the nanometre-thick In2Se3 layer modulates the transmission of electrons across the graphene/In2Se3 interface, leading to memristive effects that are controlled by applied voltages and/or by light. The underlying mechanisms of conduction are examined over a range of temperatures and under light excitation revealing thermionic injection, tunnelling and trap-assisted transport. These findings are relevant to future developments of FSJs whose geometry is well suited to miniaturization and low-power electronics, offering opportunities to expand functionalities of ferroelectrics by design of the vdW heterostructure.

Citation

Xie, S., Dey, A., Yan, W., Kudrynskyi, Z., Balakrishnan, N., Kovalyuk, Z., …Patane, A. (2021). Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. 2D Materials, 8(4), 1-9. https://doi.org/10.1088/2053-1583/ac1ada

Journal Article Type Article
Acceptance Date Aug 4, 2021
Online Publication Date Aug 20, 2021
Publication Date Oct 1, 2021
Journal 2D Materials
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 8
Issue 4
Pages 1-9
DOI https://doi.org/10.1088/2053-1583/ac1ada
Keywords ferroelectrics; semiconductors; two-dimensional materials; electron transport; photoresponse
Publisher URL https://iopscience.iop.org/article/10.1088/2053-1583/ac1ada

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