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Spin polarization and barrier-oxidation effects at the Co∕alumina interface in magnetic tunnel junctions

Telling, N. D.; van der Laan, G.; Ladak, S.; Hicken, R. J.

Authors

G. van der Laan

S. Ladak

R. J. Hicken



Abstract

The electronic structure and polarization in magnetic tunnel junctions prepared with varying degrees of barrier-layer oxidation have been studied using x-ray absorption spectroscopy across the

absorption edges. It was found that the
electronic structure near the
∕alumina interface tended to that of cobalt oxide as the barrier oxidation time was increased. However, the net

spin polarization, determined from x-ray magnetic circular dichroism, increased for moderate oxidation times compared to that obtained for an under-oxidized
interface. It is proposed that the expected dilution of the measured polarization due to the formation of (room temperature) paramagnetic cobalt oxide, is offset by an increase in the

spin-polarization of the interface layer as the interface bonding changes from
to
with increasing oxidation times.

Citation

Telling, N. D., van der Laan, G., Ladak, S., & Hicken, R. J. (2004). Spin polarization and barrier-oxidation effects at the Co∕alumina interface in magnetic tunnel junctions. Applied Physics Letters, 85(17), 3803-3805. https://doi.org/10.1063/1.1812383

Journal Article Type Article
Online Publication Date Oct 25, 2004
Publication Date Oct 25, 2004
Deposit Date May 17, 2024
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 85
Issue 17
Pages 3803-3805
DOI https://doi.org/10.1063/1.1812383
Public URL https://keele-repository.worktribe.com/output/828969