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Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier

Tsunegi, S; Sakuraba, Y; Oogane, M; Telling, N D; Shelford, L R; Arenholz, E; van der Laan, G; Hicken, R J; Takanashi, K; Ando, Y

Authors

S Tsunegi

Y Sakuraba

M Oogane

L R Shelford

E Arenholz

G van der Laan

R J Hicken

K Takanashi

Y Ando



Abstract

Epitaxially grown magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi/MgO/CoFe were fabricated. Their tunnel magnetoresistance (TMR) effects were investigated. The TMR ratio and tunnelling conductance characteristics of MTJs were considerably different between those with an MgO barrier prepared using sputtering (SP-MTJ) and those prepared using EB evaporation (EB-MTJ). The EB-MTJ exhibited a very large TMR ratio of 217% at room temperature and 753% at 2 K. The bias voltage dependence of the tunnelling conductance in the parallel magnetic configuration for the EB-MTJ suggests that the observed large TMR ratio at RT results from the coherent tunnelling process through the crystalline MgO barrier. The tunnelling conductance in the anti-parallel magnetic configuration suggests that the large temperature dependence of the TMR ratio results from the inelastic spin–flip tunnelling process.

Citation

Tsunegi, S., Sakuraba, Y., Oogane, M., Telling, N. D., Shelford, L. R., Arenholz, E., …Ando, Y. (2009). Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier. Journal of Physics D: Applied Physics, 42(19), Article 195004. https://doi.org/10.1088/0022-3727/42/19/195004

Journal Article Type Article
Online Publication Date Sep 18, 2009
Publication Date Oct 7, 2009
Deposit Date May 22, 2024
Journal Journal of Physics D: Applied Physics
Print ISSN 0022-3727
Electronic ISSN 1361-6463
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 42
Issue 19
Article Number 195004
DOI https://doi.org/10.1088/0022-3727/42/19/195004
Public URL https://keele-repository.worktribe.com/output/831120
Publisher URL https://iopscience.iop.org/article/10.1088/0022-3727/42/19/195004