Laser writing of the electronic activity of N- and H-atoms in GaAs

Martelli, F; Rubini, S; Balakrishnan, N; Patanè, A; Makarovsky, O; Polimeni, A; Capizzi, M

Abstract

We use a focussed laser beam to control the electronic activity of N- and H-atoms in a dilute nitride Ga(AsN)/GaAs quantum well. Our approach yields submicron resolution in the spatial manipulation of the electronic properties and can provide an alternative method to masking techniques for H-defect engineering and in-plane patterning of the band gap energy. This work was supported by the Royal Society and by the University of Nottingham, and the COST Action MP0805.

Citation

Martelli, F., Rubini, S., Balakrishnan, N., Patanè, A., Makarovsky, O., Polimeni, A., & Capizzi, M. (2011). Laser writing of the electronic activity of N- and H-atoms in GaAs. Applied Physics Letters, 021105 - 021105. https://doi.org/10.1063/1.3610464

• Acceptance Date: Jun 1, 2011
• Publication Date: Jul 11, 2011
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Publisher: AIP Publishing
• Pages: 021105 - 021105
• DOI: https://doi.org/10.1063/1.3610464
• Publisher URL: https://doi.org/10.1063/1.3610464