A micrometer-size movable light emitting area in a resonant tunneling light emitting diode

Pettinari, G; Balakrishnan, N; Makarovsky, O; Campion, RP; Polimeni, A; Capizzi, M; Patanè, A

doi:10.1063/1.4844975

Sustainable supercapacitor with a natural rubber-based electrolyte and natural graphite-based electrodes (2023)
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Supercapacitors are at the forefront of energy storage devices due to their ability to fulfill quick power requirements. However, safety and cost are important parameters for their real-world applications. Green materials-based electrodes and electro... Read More about Sustainable supercapacitor with a natural rubber-based electrolyte and natural graphite-based electrodes.

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Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much att... Read More about Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6.

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The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waa... Read More about Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures.

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Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mott-like insulating states in magic-angle twisted bilayer graphene (tBL... Read More about Tunable van Hove singularities and correlated states in twisted monolayer–bilayer graphene.

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The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices to thermoelectrics. Van der Waals two dimensional (2D) materials offer a versatile platform to tailor heat transfer due... Read More about Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy.

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'No abstract'

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Coherent x-ray diffractive imaging is a nondestructive technique that extracts three-dimensional electron density and strain maps from materials with nanometer resolution. It has been utilized for materials in a range of applications, and has signifi... Read More about Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction.

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Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of I... Read More about Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor.

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Exploitation of two-dimensional (2D) van der Waals (vdW) crystals can be hindered by the deterioration of the crystal surface over time due to oxidation. On the other hand, the existence of a stable oxide at room temperature can offer prospects for s... Read More about Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation.

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We demonstrate that ß-In2Se3 layers with thickness ranging from 2.8 to 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The ß-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift... Read More about Quantum confinement and photoresponsivity ofß-In2Se3 nanosheets grown by physical vapour transport.

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We report a comparative synchrotron radiation x-ray diffraction study of GaAs1-yNy micro-structures obtained by two different patterning methods: spatially selective H incorporation achieved by using H-opaque masks and spatially selective H removal a... Read More about Synchrotron x-ray diffraction study of micro-patterns obtained by spatially selective hydrogenation of GaAsN.

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Room temperature electroluminescence from semiconductor junctions is demonstrated. The junctions are fabricated by the exfoliation and direct mechanical adhesion of InSe and GaSe van der Waals layered crystals. Homojunction diodes formed from layers... Read More about Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions.

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A micrometer-size movable light emitting area in a resonant tunneling light emitting diode (2013)
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We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up... Read More about A micrometer-size movable light emitting area in a resonant tunneling light emitting diode.

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