All Outputs (22)

Substrate-induced strain in molybdenum disulfide grown by aerosol-assisted chemical vapor deposition (2024)
Journal Article
Adams, L. J., Matthews, P. D., Morbec, J. M., & Balakrishnan, N. (in press). Substrate-induced strain in molybdenum disulfide grown by aerosol-assisted chemical vapor deposition. Nanotechnology, 35(39), Article 395602. https://doi.org/10.1088/1361-6528/ad5dc1

Transition metal dichalcogenides have been extensively studied in recent years because of their fascinating optical, electrical, and catalytic properties. However, low-cost, scalable production remains a challenge. Aerosol-assisted chemical vapor dep... Read More about Substrate-induced strain in molybdenum disulfide grown by aerosol-assisted chemical vapor deposition.

Symmetric double-layer capacitor with natural rubber and sodium salt-based solid polymer electrolyte and reduced graphene oxide electrodes (2024)
Journal Article
Perera, K. S., Vidanapathirana, K. P., Adams, L. J., Hawes, C. S., & Balakrishnan, N. (2024). Symmetric double-layer capacitor with natural rubber and sodium salt-based solid polymer electrolyte and reduced graphene oxide electrodes. Journal of Energy Storage, 97, Article 112683. https://doi.org/10.1016/j.est.2024.112683

Solid polymer electrolytes (SPEs) are the key to improving electrochemical devices’ energy density and safety. In recent years, natural polymers have received tremendous attention due to the latest advances in green technology for a sustainable futur... Read More about Symmetric double-layer capacitor with natural rubber and sodium salt-based solid polymer electrolyte and reduced graphene oxide electrodes.

Sustainable supercapacitor with a natural rubber-based electrolyte and natural graphite-based electrodes (2023)
Journal Article
Perera, K., Vidanapathirana, K., Adams, L. J., & Balakrishnan, N. (2023). Sustainable supercapacitor with a natural rubber-based electrolyte and natural graphite-based electrodes. Electrochemical Science Advances, Article e2300025. https://doi.org/10.1002/elsa.202300025

Supercapacitors are at the forefront of energy storage devices due to their ability to fulfill quick power requirements. However, safety and cost are important parameters for their real-world applications. Green materials-based electrodes and electro... Read More about Sustainable supercapacitor with a natural rubber-based electrolyte and natural graphite-based electrodes.

Coherent Phonons in van der Waals MoSe2/WSe2 Heterobilayers (2023)
Journal Article
Li, C., Scherbakov, A. V., Soubelet, P., Samusev, A. K., Ruppert, C., Balakrishnan, N., …Akimov, A. V. (2023). Coherent Phonons in van der Waals MoSe2/WSe2 Heterobilayers. Nano Letters, https://doi.org/10.1021/acs.nanolett.3c02316

The increasing role of two-dimensional (2D) devices requires the development of new techniques for ultrafast control of physical properties in 2D van der Waals (vdW) nanolayers. A special feature of heterobilayers assembled from vdW monolayers is fem... Read More about Coherent Phonons in van der Waals MoSe2/WSe2 Heterobilayers.

Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6 (2022)
Journal Article
Dey, A., Yan, W., Balakrishnan, N., Xie, S., R Kudrynskyi, Z., Kudrynskyi, Z., …Patanè, A. (2022). Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6. 2D Materials, 9(3), Article 035003. https://doi.org/10.1088/2053-1583/ac6191

Ferroelectricity at the nanometre scale can drive the miniaturisation and wide application of ferroelectric devices for memory and sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP2S6 (CIPS) has attracted much att... Read More about Memristive effects due to charge transfer in graphene gated through ferroelectric CuInP2S6.

Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures (2021)
Journal Article
Xie, S., Dey, A., Yan, W., Kudrynskyi, Z., Balakrishnan, N., Kovalyuk, Z., …Patane, A. (2021). Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures. 2D Materials, 8(4), 1-9. https://doi.org/10.1088/2053-1583/ac1ada

The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waa... Read More about Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures.

Tunable van Hove singularities and correlated states in twisted monolayer–bilayer graphene (2021)
Journal Article
Xu, S., Al Ezzi, M. M., Balakrishnan, N., Garcia-Ruiz, A., Tsim, B., Mullan, C., …Shi, Y. (2021). Tunable van Hove singularities and correlated states in twisted monolayer–bilayer graphene. Nature Physics, 17, 619–626. https://doi.org/10.1038/s41567-021-01172-9

Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mott-like insulating states in magic-angle twisted bilayer graphene (tBL... Read More about Tunable van Hove singularities and correlated states in twisted monolayer–bilayer graphene.

Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy (2021)
Journal Article
Mazumder, D., Castanon, E., D. Kovalyuk, Z., Kolosov, O., Kazakova, O., Tzalenchuk, A., …R. Kudrynskyi, Z. (2021). Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy. Advanced functional materials, 31(11), Article 2008967. https://doi.org/10.1002/adfm.202008967

The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices to thermoelectrics. Van der Waals two dimensional (2D) materials offer a versatile platform to tailor heat transfer due... Read More about Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy.

Formative Assessment Encourages Active Learning by Challenging Students (2020)
Journal Article
Balakrishnan. (2020). Formative Assessment Encourages Active Learning by Challenging Students

'No abstract'

Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction (2020)
Journal Article
Felici, M., Patané, A., Polimeni, A., Clark, J., Balakrishnan, N., Clark, J. N., …Pettinari, G. (2020). Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction. communications materials, 1, Article 19. https://doi.org/10.1038/s43246-020-0021-6

Coherent x-ray diffractive imaging is a nondestructive technique that extracts three-dimensional electron density and strain maps from materials with nanometer resolution. It has been utilized for materials in a range of applications, and has signifi... Read More about Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction.

Production and processing of graphene and related materials (2020)
Journal Article
Backes, C., Abdelkader, A. M., Alonso, C., Andrieux-Ledier, A., Arenal, R., Azpeitia, J., …Garcia-Hernandez, M. (2020). Production and processing of graphene and related materials. 2D Materials, 7(2), Article 022001. https://doi.org/10.1088/2053-1583/ab1e0a

We present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures. We adopt a 'hands-on' approach, providing practical details and procedures as derive... Read More about Production and processing of graphene and related materials.

Epitaxial growth of ?-InSe and a, ß, and ?-In2Se3 on e-GaSe (2018)
Journal Article
Balakrishnan, N., Steer, E., Patanè, A., Beton, P., Kovalyuk, Z., Eaves, L., …Kudrynskyi, Z. (2018). Epitaxial growth of ?-InSe and a, ß, and ?-In2Se3 on e-GaSe. 2D Materials, 035026 - 035026. https://doi.org/10.1088/2053-1583/aac479

We demonstrate that ?-InSe and the a, ß and ? phases of In2Se3 can be grown epitaxially on e-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different p... Read More about Epitaxial growth of ?-InSe and a, ß, and ?-In2Se3 on e-GaSe.

Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe (2018)
Journal Article
Balakrishnan, N., Steer, E. D., Smith, E. F., Kudrynskyi, Z. R., Kovalyuk, Z. D., Eaves, L., …Beton, P. H. (2018). Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials, 5, Article 035026. https://doi.org/10.1088/2053-1583/aac479

We demonstrate that ?-InSe and the a, ß and ? phases of In2Se3 can be grown epitaxially on e-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different p... Read More about Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe.

Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor (2017)
Journal Article
Patanè, A., Cerutti, L., Di Paola, D., Velichko, A., Bomers, M., Balakrishnan, N., …Taliercio, T. (2018). Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor. Advanced optical materials, 6(3), Article 1700492. https://doi.org/10.1002/adom.201700492

Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid-infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of I... Read More about Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor.

Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation (2017)
Journal Article
Balakrishnan, N., Kudrynskyi, Z., Smith, E., Fay, M., Makarovsky, O., Kovalyuk, Z., …Patanè, A. (2017). Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation. 2D Materials, 025043 - 025043. https://doi.org/10.1088/2053-1583/aa61e0

Exploitation of two-dimensional (2D) van der Waals (vdW) crystals can be hindered by the deterioration of the crystal surface over time due to oxidation. On the other hand, the existence of a stable oxide at room temperature can offer prospects for s... Read More about Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation.

Quantum confinement and photoresponsivity ofß-In2Se3 nanosheets grown by physical vapour transport (2016)
Journal Article
Balakrishnan, N., Staddon, C., Smith, E., Stec, J., Gay, D., Mudd, G., …Beton, P. (2016). Quantum confinement and photoresponsivity ofß-In2Se3 nanosheets grown by physical vapour transport. 2D Materials, 025030 - 025030. https://doi.org/10.1088/2053-1583/3/2/025030

We demonstrate that ß-In2Se3 layers with thickness ranging from 2.8 to 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The ß-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift... Read More about Quantum confinement and photoresponsivity ofß-In2Se3 nanosheets grown by physical vapour transport.

Synchrotron x-ray diffraction study of micro-patterns obtained by spatially selective hydrogenation of GaAsN (2015)
Journal Article
Pettinari, G., Balakrishnan, N., Ciatto, G., Birindelli, S., Felici, M., Polimeni, A., …Patanè, A. (2015). Synchrotron x-ray diffraction study of micro-patterns obtained by spatially selective hydrogenation of GaAsN. Applied Physics Letters, 051905 - 051905. https://doi.org/10.1063/1.4907324

We report a comparative synchrotron radiation x-ray diffraction study of GaAs1-yNy micro-structures obtained by two different patterning methods: spatially selective H incorporation achieved by using H-opaque masks and spatially selective H removal a... Read More about Synchrotron x-ray diffraction study of micro-patterns obtained by spatially selective hydrogenation of GaAsN.

Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions (2014)
Journal Article
Balakrishnan, N., Kudrynskyi, Z., Fay, M., Mudd, G., Svatek, S., Makarovsky, O., …Patanè, A. (2014). Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions. Advanced optical materials, 1064 - 1069. https://doi.org/10.1002/adom.201400202

Room temperature electroluminescence from semiconductor junctions is demonstrated. The junctions are fabricated by the exfoliation and direct mechanical adhesion of InSe and GaSe van der Waals layered crystals. Homojunction diodes formed from layers... Read More about Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions.

Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes (2014)
Journal Article
Patanè, A., Hopkinson, M., Makarovsky, O., Balakrishnan, N., & Pettinari, G. (2014). Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes. Applied Physics Letters, 242110 - 242110. https://doi.org/10.1063/1.4884425

We report on the tuning of the spectral response of superlattice (SL) diodes based on dilute nitride Ga(AsN) alloys by post-growth hydrogenation. Hydrogen is incorporated into the superlattice where it neutralizes the electronic activity of nitrogen... Read More about Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes.

A micrometer-size movable light emitting area in a resonant tunneling light emitting diode (2013)
Journal Article
Pettinari, G., Balakrishnan, N., Makarovsky, O., Campion, R., Polimeni, A., Capizzi, M., & Patanè, A. (2013). A micrometer-size movable light emitting area in a resonant tunneling light emitting diode. Applied Physics Letters, 241105 - 241105. https://doi.org/10.1063/1.4844975

We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up... Read More about A micrometer-size movable light emitting area in a resonant tunneling light emitting diode.